Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique
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Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique

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Published by National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program, National Technical Information Service, distributor] in [Washington, DC], [Springfield, Va .
Written in English

Subjects:

  • Silicon nitride.

Book details:

Edition Notes

StatementDon J. Roth ... [et al.].
SeriesNASA technical paper -- 3377., NASA technical paper -- 3377.
ContributionsRoth, Don J., United States. National Aeronautics and Space Administration. Scientific and Technical Information Program.
The Physical Object
FormatMicroform
Pagination1 v.
ID Numbers
Open LibraryOL14701681M

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